On the effective electron mass in quantum well wires of ternary chalcopyrite semiconductors |
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| Authors: | A. Ghoshal B. Mitra K. P. Ghatak |
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| Affiliation: | (1) Department of Electronics and Telecommunication Engineering Faculty of Engineering and Technology, University of Jadavpur, 700 032 Calcutta, India;(2) Present address: Department of instrumentation Engineering, University of Jadavpur, 700 032 Calcutta, India;(3) Present address: Office Controller of Examinations, University of Jadavpur, 700 032 Calcutta, India |
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| Abstract: | Summary An attempt is made to study effective electron mass in quantum well wires of ternary chalcopyrite semiconductors by formulating a new 1D dispersion relation, within the framework of thek·p formalism considering the anisotropies in the band parameters. It is found, taking quantum well wires ofn-CdGeAs2 as an example, that the effective Fermi level mass depends on the subband index due to the combined influence of crystal-field splitting parameter and the anisotropic spinorbit splitting parameters, respectively. The masses increase with increasing carrier degeneracy and decreasing film thickness, respectively. In addition, the well-known results for the corresponding parabolic energy bands have been derived as special cases of the generalized formulations. |
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| Keywords: | General theories and computational techniques (including many-body perturbation theory density-functional theory atomic sphere approximation methods Fourier decomposition methods etc.) |
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