| New Approach to Investigation of Tunable External Cavity Semiconductor Lasers |
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| 作者姓名： | LU Hongchang LUO Bin |
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| 作者单位： | LU Hongchang; LUO Bin (Southwest Jiaotong University，Chengdu 610031，China) ZHOU Xiaohong; CHEN Jianguo (Sichuan University，Chengdu 610061，China) |
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| 摘 要： | ＮｅｗＡｐｐｒｏａｃｈｔｏＩｎｖｅｓｔｉｇａｔｉｏｎｏｆＴｕｎａｂｌｅＥｘｔｅｒｎａｌＣａｖｉｔｙＳｅｍｉｃｏｎｄｕｃｔｏｒＬａｓｅｒｓ￥ＬＵＨｏｎｇｃｈａｎｇ；ＬＵＯＢｉｎ（ＳｏｕｔｈｗｅｓｔＪｉａｏｔｏｎｇＵｎｉｖｅｒｓｉｔｙ，Ｃｈｅｎｇｄｕ６１...
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| 收稿时间： | 1995/11/20 |
New Approach to Investigation of Tunable External Cavity Semiconductor Lasers |
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| LU Hongchang, LUO Bin.New Approach to Investigation of Tunable External Cavity Semiconductor Lasers[J].中国激光(英文版),1996,5(2):97-103. |
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| Authors: | LU Hongchang LUO Bin |
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| Abstract: | Based on the expression of the output spectrum of a two-sub-cavity semiconductor laser deduced with the ray trace method, the external cavity semiconductor laser (ECLD) has been investigated. Modifications of such predicted laser charactcristics as the nominal threshold carrier density,resonant wavelengths etc. by the reflection at the diode facet facing the external reflector have been addressed, and the required reflectivity at the AR coated facet to achieve a quasi-continuous tunability is also quantified. |
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| Keywords: | output spectrum ray trace method external cavity semiconductor laser |
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