Highly efficient short length Bismuth-based erbium-doped fiber amplifier |
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Authors: | Cheng X. S. Hamida B. A. Arof H. Ahmad H. Harun S. W. |
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Affiliation: | 1.Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603, Kuala Lumpur, Malaysia ;2.Optoelectronic Laboratory, Electrical and Computer Engineering Department, Faculty of Engineering, International Islamic University Malaysia (IIUM), 53100, Gombak, Kuala Lumpur, Malaysia ;3.Photonics Research Center, University of Malaya, 50603, Kuala Lumpur, Malaysia ; |
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Abstract: | An efficient 21 cm Bismuth-based erbium doped fiber amplifier (Bi-EDFA) operating in both C- and L-band wavelength regions is proposed and demonstrated. The proposed Bi-EDFA uses the gain medium with an erbium ion concentration of 6300 ppm in conjunction with a double-pass configuration. Compared to conventional silica-based erbium-doped fiber amplifiers (Si-EDFAs) with the same amount of Erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a flat-gain of around 23 dB with gain variation of ±3.5 dB within the wavelength region from 1530 to 1565 nm at the maximum pump power of 150 mW. The corresponding noise figures are obtained at an average of 6 dB. |
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