| Abstract: | In this paper, we present an in situ annealing study on Mg(15 Å)/GaAs(100) interface using X‐ray photoelectron spectroscopy (XPS). The core level results indicate that an interfacial reaction starts between Mg and Ga atoms at room temperature and enhances with annealing. However, at a higher temperature of annealing, a mixed layer of ternary Mg–Ga–As phase is formed at the interface. Corresponding Auger spectra of Mg, Ga and As also show considerable modifications in their nature and therefore support the above reaction. The observed results are correlated and interpreted in terms of continuous changes in electronic and chemical environment at the Mg/GaAs interface. Copyright © 2005 John Wiley & Sons, Ltd. |
