Quantitative XPS analysis of hydrosilated 1‐alkene and 1‐alkyne at terraced,dihydrogen‐terminated, 1 × 1 (100) silicon

A quantitative angle‐resolved XPS analysis was carried out of the carbonaceous films resulting from the derivatization under mild thermal activation of nearly flat, terraced, dihydrogen‐terminated, 1 × 1 (100) Si with 1‐octene or 1‐octyne. The analysis of the C 1s signal gave evidence for the presence of carbon in carbide configuration (Si? C bonds) at the substrate–film interface, in addition to the alkanic carbon and adventitious oxidized carbon (C? O bonds) produced by the oxidizing impurities flawing the reaction. Assuming the surface as uniformly covered, the analysis showed that for both reactants the films were closely packed. Copyright © 2006 John Wiley & Sons, Ltd.