Dual-channel strained-layer in GaAs-GaAs-AlGaAs WDM source withintegrated coupler by selective-area MOCVD |
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| Authors: | Lammert R.M. Cockerill T.M. Forbes D.V. Coleman J.J. |
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| Affiliation: | Mater. Res. Lab., Illinois Univ., Urbana, IL; |
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| Abstract: | Selective-area metalorganic chemical vapor deposition is used to fabricate a dual-channel strained-layer InGaAs-GaAs-AlGaAs WDM source with integrated coupler. Threshold currents of 11.5 mA were obtained for 1100 μm long uncoated channels operating cw at room temperature. Both channels can be coupled into a single mode fiber without the need for an external coupler |
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