Dielectric properties of a triglycine sulfate crystal grown with a transition through the Curie point

The dielectric properties of the triglycine sulfate (TGS) crystal grown by lowering the temperature with a transition through Curie point T_C during its growth are studied. The greatest values of low-frequency dielectric permittivity ε_max(T = T_C) and effective dielectric permittivity ε_eff(E₀) correspond to the layer of crystal formed at the temperature of the phase transition.