Polyamorphism in silicon nanocrystals under pressure |
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| Authors: | N. N. Ovsyuk S. G. Lyapin |
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| Affiliation: | 1.Sobolev Institute of Geology and Mineralogy, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia;2.Institute for High Pressure Physics,Troitsk, Moscow oblast,Russia |
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| Abstract: | Many works have been devoted to describing mechanisms of pressure-induced polyamorphism. This phenomenon is apparent in the phase transition between low- and high-density amorphous states (LDA and HDA) upon the application of pressure, resulting in substantial changes in the structure and physical properties of the amorphous state. The HDA–LDA transition in Si nanocrystals is observed when recording Raman spectra in situ during decompression at 6.68 GPa. |
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