| 离子注入半绝缘GaAs电激活效率与电激活均匀性的研究 |
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| 引用本文： | 刘明成,刘福润.离子注入半绝缘GaAs电激活效率与电激活均匀性的研究[J].半导体杂志,2000,25(3):1-7. |
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| 作者姓名： | 刘明成 刘福润 |
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| 作者单位： | 天津师范大学物理系!天津300074 |
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| 摘 要： | 研究了Ｓｉ＾＋和Ｓｉ＾＋／Ａｓ＾＋注入到Ｈｏｒｉｚｏｎｔａｌ Ｂｒｉｄｇｍａｎ（ＨＢ）和Ｌｉｑｕｉｄ Ｅｎｃａｐｓｕｌａｔｅｄ Ｃｚｏｃｈｒａｌｓｋｉ（ＬＥＣ）方法制备的半绝缘ＧａＡｓ衬底电激活效率与均匀性。结果发现：在相同条件下（注入与退火），不同生长方法的半绝缘ＧａＡｓ衬底电激活不同，通常电激活ＨＢ〉ＬＥＣ，ＨＢ ＳＩ－－ＧａＡｓ（Ｃｒ）（１００）Ａ面〉（１００）Ｂ面，Ｓｉ＾＋／Ａｓ＾＋双离子
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| 关 键 词： | 离子注入 半绝缘 砷化镓 电激活均匀性 |
An Investigation of Activity and Uniformity For SI-GaAs By Ion Implantation |
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| Authors: | LIU Min-cheng LIU Fu-run LU Guang-yuan ZHAO Jie WANG Yong-chen |
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| Abstract: | The activity and the uniformity of SI-GaAs by Si +, Si +/As + implantation have been studied. The results showed that under the same condition, the activity is various with the growth methods of Horizontal Bridgman(HB) and Liquid Encapsulated Crochizoski (LEC). Usually the activity by HB higher than that of LEC. For HB method, the activity of (100)A > (100)B. The activity by dual ion implantation of Si +/As + higher than that by Si + only. Dual ion implantation can improve the uniformity which caused by the EL2 distribution in LEC-SI-GaAs Substrate. The profile Hall measurement of LEC-SI-GaAs(EL2) by Si +/As + implantation indicated that mobility of active layer is uniform, it can reach to 4000 cm 2/V.s. The Raman characterization showed that the complex which involved in As vacancies process positive acceptors can be reduced even eliminated by high dose Si +/As + implantation. This is the main reason for improving the quality of implanted layer of the GaAs materials. |
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| Keywords: | Si~+/As~+ iomplantaion SI-GaAs Activity uniformity |
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