| Passive Q-Switching Modelocked Yb^3＋ -Doped Fibre Laser with GaAs Absorber Grown at Low Temperature |
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| 作者姓名： | 冯小明 王勇刚 刘媛媛 蓝永生 林涛 王晓薇 方高瞻 马骁宇 张志刚 |
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| 作者单位： | [1]InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083 [2]UltrafastLaserLaboratory,SchoolofPrecisionInstrumentandOptoelectronicsEngineering,TianjinUniversity,Tianjin300072 |
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| 摘 要： | GaAs absorber was grown at low temperature (550℃) by metal organic chemical vapour deposition (MOCVD)and was used as an output coupler with which we realized Q-switching modelocked yb^3 -doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 31μs. The modelocking threshold is 4.27 W and the highest average output pulse power is 290mW. The modelocking frequency is 12 MHz.
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| 关 键 词： | 超短脉冲 Q-开关 锁定模式 纤维激光器 砷化镓吸收器 |
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