Detection of excess crystalline As in GaAs: Nation oxide overlayers by Raman scattering |
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| Authors: | Mukesh Jain Guru Datta P Venkataraman S C Abbi K P Jain |
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| Institution: | (1) Laser Technology Research Programme, Indian Institute of Technology, 110 016 New Delhi, India;(2) Department of Theoretical Physics, University of Oxford, 1 Keble Road, OX1 3NP Oxford, England |
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| Abstract: | Laser Raman spectroscopy was employed as a non-destructive probe for the detection and monitoring of crystalline arsenic in
the native oxide films formed during heating of GaAs in air at various temperatures. Spectroscopy of oxide films formed after
successive heating and etching treatments could confirm the location of arsenic to be near the top of the GaAs: native oxide
overlayer. |
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| Keywords: | GaAs native oxide Raman scattering |
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