非晶硅中的缺陷态光吸收谱 |
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引用本文: | 韩大星,肖扬.非晶硅中的缺陷态光吸收谱[J].固体电子学研究与进展,1989,9(4):396-398. |
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作者姓名: | 韩大星 肖扬 |
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作者单位: | 中国科学院物理研究所
(韩大星,肖扬,吴雷),中国科学院物理研究所(钱生法) |
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摘 要: | <正> 非晶硅薄膜的光学及电学性质与共电子局域态分布紧密相关。为了改进非晶硅薄膜器件的性质,如太阳能电池、薄膜晶体管等,需要低局域态密度的材料,因而测量并了解局域态的性质十分重要。局域态包括带尾态、缺陷态及亚稳缺陷态。本文着重讨论缺陷态及亚稳缺陷态。
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关 键 词: | 非晶硅 缺陷态 光谱 测量 簿膜 |
Defect Optical Absorption in a-Si:H |
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Abstract: | An extra band of change in optical absorption was observed by means of Infrared Stimulated Current method (IRSC) for either native or light- induced metastable defects in a-Si:H.Both the spectral distribution of the extra absorption and the relaxation of the light-induced metastable states are different from those of native defects. The photo-induced absorption spectra △α/α of a-Si:H samples can be obtained by measuring the primary and the second harmonic of Photothermal Deflection Spectroscopy(PDS) signal. From the △α/α we can indicate the defect state energy levels, thus studying the new gap states caused by doping. |
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