| GaAs/Al1-xAs表面单量子阱原位光调制反射光谱研究 |
| |
| 引用本文： | 缪中林,陈平平,陆卫,徐文兰,李志锋,蔡炜颖,史国良,沈学础. GaAs/Al1-xAs表面单量子阱原位光调制反射光谱研究[J]. 物理学报, 2001, 50(1): 111-115 |
| |
| 作者姓名： | 缪中林 陈平平 陆卫 徐文兰 李志锋 蔡炜颖 史国良 沈学础 |
| |
| 作者单位： | 中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 |
| |
| 基金项目： | 国家自然科学基金(批准号：69676014)资助的课题.Project supported by the National Natural Science Foundation of China (Grant No.69676014). |
| |
| 摘 要： | 关键词：
|
| 关 键 词： | 表面量子阱 原位光调制反射谱 分子束外延 砷化镓 半导体 |
| 修稿时间： | 1999-12-05 |
IN-SITU PHOTO-MODULATEDREFLECTANCE STUDY ON GaAs/AlxGa1-xAs SINGLE SURFACE QUANTUM WELLS |
| |
| MIU ZHONG-LIN,CHEN PING-PING,LU WEI,XU WEN-LAN,LI ZHI-FENG and CAI WEI-YING. IN-SITU PHOTO-MODULATEDREFLECTANCE STUDY ON GaAs/AlxGa1-xAs SINGLE SURFACE QUANTUM WELLS[J]. Acta Physica Sinica, 2001, 50(1): 111-115 |
| |
| Authors: | MIU ZHONG-LIN CHEN PING-PING LU WEI XU WEN-LAN LI ZHI-FENG CAI WEI-YING |
| |
| Abstract: | We have studied the optical properties of surface quantum wells with different width of wells (5nm and 10nm) by means of In-situ photo-modulated reflectance(PR) spectroscopy on a molecular beam epitaxy system. The surface quantum well is confined on one side by the vacuum and on the other side by AlxGa1-xAs barrier. In experiments, we have observed clearly the transitions between the confined heavy and light hole states to the confined electron states. The transitions of the excited states in 10nm surface quantum well are observed at first. The effects of the surface on the confined states have been well studied by combination of the PR spectra and the effective mass approximation theory. |
| |
| Keywords: | |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
