| 有机单体3-phenyl-1-ureidonitrile薄膜的超高密度信息存储 |
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| 引用本文： | 时东霞,张昊旭,解思深,庞世瑾,高鸿钧,宋延林. 有机单体3-phenyl-1-ureidonitrile薄膜的超高密度信息存储[J]. 物理学报, 2001, 50(2): 361-364 |
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| 作者姓名： | 时东霞 张昊旭 解思深 庞世瑾 高鸿钧 宋延林 |
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| 作者单位： | (1)中国科学院化学研究所分子科学中心,北京100080; (2)中国科学院物理研究所凝聚态物理中心真空物理开放实验室,北京100080; (3)中国科学院物理研究所凝聚态物理中心真空物理开放实验室,北京100080,东北大学机械工程与自动化学院,沈阳110006 |
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| 基金项目： | 国家自然科学基金重大项目子课题(批准号:69890223)资助的课题. |
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| 摘 要： | 采用扫描隧道显微镜(STM)在3-phenyl-1-ureidonitrile(PUN)有机单体薄膜上进行了超高密度信息存储的研究.通过在STM针尖和高定向裂解石墨(HOPG)衬底之间施加一系列的电压脉冲,在薄膜上写入了一个稳定的5×6信息点阵,信息点的大小是0.8nm.电流电压(I-V)曲线表明,施加电压脉冲前后薄膜的导电性质发生了变化.信息点的写入机制可能是强电场作用下引发的PUN分子的局域聚合,从而导致薄膜由高电阻态向低电阻态转变.关键词：超高密度信息存储有机薄膜扫描隧道显微镜(STM)
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| 关 键 词： | 超高密度信息存储 有机薄膜 扫描隧道显微镜(STM) |
| 文章编号： | 1000-3290/2001/50(02)/0361-04 |
| 收稿时间： | 2000-08-16 |
| 修稿时间： | 2000-08-16 |
ULTRAHIGH-DENSITY DATA STORAGE ON AN ORGANIC MONOMER 3-PHENYL-1-UREIDONITRILE THIN FILM |
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| SHI DONG-XIA,ZHANG HAO-XU,XIE SI-SHEN,PANG SHI-JIN,Gao Hong-jun,SONG Yan-Lin. ULTRAHIGH-DENSITY DATA STORAGE ON AN ORGANIC MONOMER 3-PHENYL-1-UREIDONITRILE THIN FILM[J]. Acta Physica Sinica, 2001, 50(2): 361-364 |
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| Authors: | SHI DONG-XIA ZHANG HAO-XU XIE SI-SHEN PANG SHI-JIN Gao Hong-jun SONG Yan-Lin |
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| Abstract: | Ultrahigh-density data storage on a 3-phenyl-1-ureidonitrile (PUN) thin film was performed using a scanning tunneling microscope. The recorded marks of 0.8 nm in diameter were obtained when voltage pulses of 4 V for 10ms were applied between the STM tip and highly ordered pyrolytic graphite substrate. The current-voltage relations at the local regions of the films indicate that the recorded region is conductive and the unrecorded region is in a high impedance state. A possible mechanism of this data storage was suggested and discussed. |
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| Keywords: | Ultrahigh-density data storage Organic thin film Scanning tunneling microscope |
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