1 s–2 p ± transitions between hydrogenic states in GaAs low-dimensional systems under external fields

A variational formalism for calculating the binding and the transition energies between 1 s - and 2 p _± -like states of a shallow donor in cylindrical pills of GaAs low-dimensional systems, under the action of the electric and magnetic fields applied in the axial direction, is presented. Results were obtained for several values of the magnetic field as a function of the system geometry and the applied electric field. Within the two-dimensional limits, the theoretical results for the 1 s– 2 p ₊ transition energies are in good agreement with infrared-magnetospectroscopy measurements on donor doped quantum-wells.