| 质子注入等平面GaAs梁式引线混频管 |
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| 引用本文： | 戴沛然.质子注入等平面GaAs梁式引线混频管[J].固体电子学研究与进展,1990(4). |
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| 作者姓名： | 戴沛然 |
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| 作者单位： | 南京电子器件研究所 |
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| 摘 要： | 本文论述质子注入等平面GaAs梁式引线混频管的特点、器件结构及工艺途径.根据理论分析及实验,采用厚度合适的选镀金层作为掩蔽膜,选定合适能量及剂量的多能量叠加质子注入条件,得到较为满意的实验结果,制成的样管在8mm波段测得的变频损耗Lc=5～5.5dB.
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Proton-Implanted Isopianar GaAs Beam Lead Mixer Diode |
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| Abstract: | This paper describes features and structure of the proton-implanted iso-planar GaAs beam lead miser diode and briefly introduces its processing. Using the selective plating gold film with proper thickness as a mask and employing multiple proton implantation method with proper energy and dose, the satisfactory diodes are made with the conversion loss Lc of 5-5.5dB in 8mm band |
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