X-ray diffraction study of defects in zinc-diffusion-doped silicon |
| |
Authors: | V. V. Privezentsev |
| |
Affiliation: | 1. Institute of Physics and Technology, Russian Academy of Sciences, Nakhimovskii pr. 34, Moscow, 117218, Russia
|
| |
Abstract: | Samples of CZ n-Si〈Zn〉(111) are prepared by high-temperature zinc-diffusion annealing followed by quenching and are studied by X-ray diffraction. The silicon contains an initial phosphorus impurity and zinc-compensating admixture at concentrations N P = 1.5 × 1014 cm?3 and N Zn = 1 × 1014 cm?3; i.e., the relation N P/2 < N Zn < N P is fulfilled. Microdefects are studied by double- and triple-crystal X-ray diffraction in the dispersion free modes (n, ?n) and (n, ?n, +n). The samples are found to contain microdefects with two characteristic sizes (average sizes of about 1 μm and 70 nm). The interplanar distance in the near-surface layer with a thickness of 0.1 μm is smaller than this parameter in the remaining matrix, the difference being equal to d 0 Δd/d 0 ≈ 2 × 10?5. This layer contains mainly vacancy-type microdefects. The angle between the reflecting planes and the local surface relief is Δψ = (7 ± 1) arcmin. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|