Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane |
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Authors: | V V Ratnikov R N Kyutt A N Smirnov V Yu Davydov M P Shcheglov T V Malin K S Zhuravlev |
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Institution: | 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya, St. Petersburg, 194021, Russia 2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrentéva 13, Novosibirsk, 630090, Russia
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Abstract: | The electric and structural characteristics of silicon-doped GaN and Al0.3Ga0.7N layers grown by molecular beam epitaxy (MBE) using silane have been analyzed by the Hall effect, Raman spectroscopy, and high-resolution X-ray diffractometry. It is established that the electron concentration linearly increases up to n = 4 × 1020 cm?3 with an increase in the silane flow rate for GaN:Si, whereas the corresponding dependence for Al0.3Ga0.7N:Si is sublinear and the maximum electron concentration is found to be n = 4 × 1019 cm?3. X-ray measurements of sample macrobending indicate a decrease in biaxial compressive stress with an increase in the electron concentration in both GaN:Si and Al0.3Ga0.7N:Si layers. The parameters of the dislocation structure, estimated from the measured broadenings of X-ray reflections, are analyzed. |
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