Accurate Small-Signal Model Extraction for pHEMT on GaAs |
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| Authors: | Lei Wang Rui-Min Xu Bo Yan |
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| Affiliation: | (1) School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, People’s Republic of China |
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| Abstract: | An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by comparing the simulated and measured result of two pHEMTs and a fabricated ka-band power amplifier. The conclusion can be drawn that the proposed modeling method is rather accurate and efficient. |
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| Keywords: | Gallium arsenide (GaAs) Intrinsic parameters Parasitic parameters Small-signal model Power amplifier |
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