首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Electrical transport and noise in semiconducting carbon nanotubes
Authors:Yu-Ming Lin  Joerg Appenzeller  Zhihong Chen  Phaedon Avouris
Institution:aIBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
Abstract:We investigate electrical transport and noise in semiconducting carbon nanotubes. By studying carbon nanotube devices with various diameters and contact metals, we show that the ON-currents of CNFETs are governed by the heights of the Schottky barriers at the metal/nanotube interfaces. The current fluctuations are dominated by 1/f noise at low-frequencies and correlate with the number of transport carriers in the device regardless of contact metal.
Keywords:Carbon nanotube  Noise  Schottky barrier  FET
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号