Electrical transport and noise in semiconducting carbon nanotubes |
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Authors: | Yu-Ming Lin Joerg Appenzeller Zhihong Chen Phaedon Avouris |
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Institution: | aIBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA |
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Abstract: | We investigate electrical transport and noise in semiconducting carbon nanotubes. By studying carbon nanotube devices with various diameters and contact metals, we show that the ON-currents of CNFETs are governed by the heights of the Schottky barriers at the metal/nanotube interfaces. The current fluctuations are dominated by 1/f noise at low-frequencies and correlate with the number of transport carriers in the device regardless of contact metal. |
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Keywords: | Carbon nanotube Noise Schottky barrier FET |
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