Direct photoetching of single crystal SiC by VUV-266 nm multiwavelength laser ablation |
| |
Authors: | J Zhang K Sugioka S Wada H Tashiro K Toyoda |
| |
Institution: | (1) Institute of Physical and Chemical Research (RIKEN), Wako, Saitama, 351-01, Japan (Fax: +81-48/462-4703), JP |
| |
Abstract: | 2 O2:H2O and HF:H2O. The analysis of the etched samples by scanning electron microscopy (SEM) and scanning probe microscopy (SPM) indicates
that an array of square holes having well-defined patterned structures and clean substrate surfaces were obtained. The X-ray
photoelectron spectroscopy (XPS) analysis indicates that the SiC samples etched by VUV-266 nm multiwavelength laser have a similar
stoichiometry after chemical post-treatment as the virgin SiC. The mechanism of high-quality ablation using VUV-266 nm multiwavelength
laser is discussed in comparison with ablation using 266 nm single wavelength. The chemical post-treatment contributes to
removing the residues from the laser photolysis of SiC.
Received: 26 August 1996/Accepted: 17 October
1996 |
| |
Keywords: | PACS: 42 60 81 60 85 30 |
本文献已被 SpringerLink 等数据库收录! |