生长功率对HgCdTe薄膜微观结构以及表面形貌影响

实验采用射频磁控溅射生长了HgCdTe薄膜，并利用台阶仪、XRD、原子力显微镜等现代分析手段对HgCdTe薄膜的生长速率、物相、表面形貌进行了研究。实验结果表明，随着溅射功率增大，其生长速率成线性增大，当溅射功率低于30w时，薄膜XRD衍射图谱上没有出现任何特征衍射峰，只是在2θ=23°附近出现衍射波包，材料具有明显的非晶态特征，当溅射功率高于30w时，XRD表现为多晶结构；AFM和SEM分析表明生长速率对HgCdTe薄膜表面粗糙度、形貌、形成机理等有直接影响，随着生长速率提高，薄膜表面粗糙度逐渐增大，且薄膜逐渐形成“迷津”结构。

Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering

Mercury cadmium telluride films were grown by the RF magnetron sputtering technique at different sputtering powers. In experiment, X-ray diffraction (XRD) and atomic forcemicroscopy (AFM) have been used to characterize the microstructure of HgCdTe films. The experimental results showed that when the growth power increased, the growth rate of HgCdTe films increased; when the growth power was less than 30 W, the HgCdTe film deposited by RF magnetron sputtering was amorphous; when the growth power was more than 30 W, the films exhibited polycrystalline structure. Films deposited at different growth rates were found to have characteristically different formations and surface morphologies; as observed through AFM, the surface morphology is composed of longitudinal islands forming a maze-like pattern in the high deposition rate. AFM analysis also illustrated that a significant reduction in the areal density of large islands and characteristically smoother films was achieved using a low deposition rate.