Rapid thermal diffusion of aluminum in silicon and its interaction with phosphorus

Aluminum diffusion profiles in silicon were produced under rapid thermal processing conditions using a Si-sandwich structure to avoid losses of aluminum by reaction with the quartz reactor. The impact of phosphorus on the diffusion behaviour of aluminum was investigated by predeposition of P into Al-diffused wafers and vice versa. Dopant profiles were determined by SIMS (Secondary-Ion-Mass Spectroscopy), electrochemical CV-and SRP (Spreading Resistance) analysis. The resulting profiles after Al predeposition at 1293 K exhibit high Al-surface concentrations up to the solid solubility limit of about 2×10²⁵ m^–3. It is shown that phosphorus has a great influence on the drivein behaviour of Al, leading to an accelerated Al diffusion in front of the P profile (enhanced Al diffusion caused by self-interstitial supersaturation) and an up-hill migration of Al in the high-concentration regime, which can be explained by field-assisted diffusion. A strong retardation of aluminum diffusion combined with concentrations well above the solidsolubility limit was observed during the Al predeposition into P-diffused wafers.