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Ultrasonic wave propagation in IIIrd group nitrides
Authors:DK Pandey  Devraj Singh
Institution:a Department of Physics, University of Allahabad, Allahabad 211 002, India
b Department of Physics, Iswar Saran Degree College, Allahabad 211 004, India
Abstract:The ultrasonic attenuation in hexagonal structured (wurtzite) third group nitrides (GaN, AlN and InN) has been evaluated at 300 K for an ultrasonic wave propagating along the unique axis of the crystal. Higher order elastic constants of these materials are calculated using the Lennard-Jones potential for the determination of ultrasonic attenuation. The ultrasonic velocity, Debye average velocity, thermal relaxation time and acoustic coupling constant are evaluated along the z-axis of the crystal using the second order elastic constants and other related parameters. The contributions of the elastic constants, thermal conductivity, thermal energy density, ultrasonic velocity and acoustic coupling constant to the total attenuation are studied. On the basis of the ultrasonic attenuation, it can be concluded that the AlN is more ductile than either GaN or InN at 300 K. Orientation dependent characterization has been achieved by calculation of the orientation dependent ultrasonic velocity, Debye average velocity and thermal relaxation time for the materials.
Keywords:Semiconductor  Elastic properties  Thermal conductivity  Ultrasonic techniques
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