首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Optical characterization of InGaN/AlGaN/GaN diode grown on silicon carbide
Authors:Haddou EL Ghazi  Anouar Jorio  Izeddine Zorkani  Mohamed Ouazzani-Jamil
Institution:

aSolid State Physic Laboratory, Faculty of Sciences, Dhar El Mahraz, B.P. 1796 Atlas-Fes, Morocco

bRegional Center of Interface, Sidi Mohamed Ben Abdellah University, Fes, Morocco

Abstract:Electroluminescence (EL) properties of InxGa1?xN/AlyGa1?yN/GaN/SiC diode were studied. The spectral range for which EL spectra were recorded is 1–3.5 eV. Room temperature EL was obtained for forward bias (3.18 V, 220 μA) at 446.067 nm (blue luminescence band), 606.98 nm (yellow luminescence band) and 893.84 nm (Infrared luminescence band). The EL temperature dependence shows that, BL band is mostly given by e–h recombination corresponding to indium composition equal to 0.17 ± 0.01 and 0.14 ± 0.02 obtained theoretically and experimentally, respectively. The yellow band is generally weak and absent at low temperature. The IRL band is more consistent with the DAP recombination and could be explained by the thermal activation of Mg states. The luminescence bands shift to lower energies is due probably to the larger potential fluctuations effect.
Keywords:InGaN  Electroluminescence  Temperature effect
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号