Study of the interaction of argon and nitrogen ions with the silicon dioxide surface

Angular dependences of the sputtering yield, surface layer composition, and changes in the mass spectra of residual atmosphere upon irradiation of silicon dioxide with argon and nitrogen ions are measured. It is found that the sputtering yield of SiO₂ bombarded by N ₂ ⁺ ions is almost two times higher than for Si. The sputtering yields of SiO₂ and Si irradiated with Ar ions are identical, although the binding energy of atoms in SiO₂ is almost two times higher than in Si. An analysis of the surface composition and residual atmosphere near the sample during its irradiation suggests that a chemical reaction is involved in SiO₂ sputtering. Molecules of SiO and NO gases form in the surface layer, whose subsequent desorption increases the SiO₂ sputtering rate.