MBE生长PbSe/PbSrSe量子阱结构的光致中红外发光的研究

研究了分子束外延技术生长的PbSe/PbSrSe多量子阱结构的中红外光致荧光现象.高分辨率X射线衍射（HRXRD）谱观察到了多量子阱所特有的多级卫星峰，表明量子阱界面陡峭.变温光致荧光谱测量显示量子阱结构对电子空穴有强的限制效应，在相同温度下，量子阱样品的荧光峰峰位相对PbSe体材料有一定的蓝移.发现量子阱样品的荧光强度同温度有关，温度从150 K上升到230 K时，荧光强度逐渐增大，温度继续升高，荧光强度缓慢下降，但在高于室温时，仍能观察到较强的荧光发射，这说明该量子阱结构材料具有应用于室温工作的中红外关键词：PbSe/PbSrSe多层量子阱（MQWs）光致中红外荧光高分辨X射线衍射（HRXRD）

Mid-infrared photoluminescence of PbSe/PbSrSe multiple quantum wells grown by molecular beam epitaxy

Mid-Infrared photoluminescence of PbSe/PbSrSe multiple quantum wells （MQWs） grown by molecular beam epitaxy is studied. High-order satellite peaks are observed by high resolution X-ray diffraction, which indicates the quantum well structure has sharp interfaces. Temperature dependence of photoluminescence spectra shows that the MQWs make good confinement of electrons and holes. At the same measurement temperature, the photoluminescence peaks of the MQW sample show a clear blue shift compared with that of the bulk PbSe material. We find that the intensity of photoluminescence is dependent on the measurement temperature. When temperature increases from 150 K to 230 K, the PL intensity reaches its maximum at 230 K, and with further increasing the intensity decreases slowly. We can still observe strong PL intensity above room temperature, which indicates MQWs have the potential to be used in room-temperature_operating mid-infrared optoelectronic devices.