Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers |
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| Authors: | J Siegert A Gaarder S Marcinkevi
ius R Leon S Chaparro S R Johnson Y Sadofyev Y H Zhang |
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| Institution: | a Department of Microelectronics and Information Technology, Royal Institute of Technology, IMIT-Optics, KTH Electrum 229, 164 40, Kista, Stockholm, Sweden;b Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA;c Center for Solid State Electronics Research and Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-6206, USA |
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| Abstract: | Carrier dynamics in aligned InAs/GaAs quantum dots (QDs) grown on cross-hatched patterns induced by metastable InxGa1−xAs layers have been studied by time-resolved photoluminescence. The low-temperature carrier lifetimes were found to be of the order of 100–200 ps and determined by carrier trapping and nonradiative recombination. Comparisons with control “nonaligned” InAs QDs show remarkable differences in dependence of peak PL intensities on excitation power, and in PL decay times dependences on both temperature and excitation intensities. Possible origin of traps, which determine the carrier lifetimes, is discussed. |
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| Keywords: | Quantum dots Dislocations Lateral alignment Time-resolved photoluminescence |
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