脉冲LDA泵浦Nd∶YVO4/GaAs被动调Q锁模激光器

用脉冲激光二极管阵列（LDA）作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As＋注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60％的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95％以上,锁模脉冲重复频率991 MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论.

Pulse LDA-pumped Passively Q-switched Mode Locked Nd: YVO4 Laser with a GaAs Saturable Absorber

A passively Q-switched pulse-LDA(laser diode array)-pumped Nd∶YVO4 laser using As＋ implanted GaAs as a saturable absorber is demonstrated. In the Q-switching experiment,the laser produces one Q-switching pulse in every pumping pulse duration and a Q-switching pulse width 7 ns is achieved which,to our knowledge, is the shortest pulse width in a passively Q-switched Nd∶YVO4 laser using GaAs as saturable absorber.In the Q-switching mode locking experiment,using a 60% initial transmission GaAs wafer,the modulation depth of larger than 95% and the repetition rate of 991 MHz of the mode locked pulses in the Q-switched envelope are obtained.The characteristics of the Q-switched mode locked pulses by varying the pumping pulse amplitude, pulse width and repetition rate are investigated respectively.The experimental results are discussed as well.