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Phase analysis in α-Fe after high-dose Si ion implantation by depth-selective conversion-electron Mössbauer spectroscopy (DCEMS) |
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| Authors: | M Walterfang S Kruijer M Dobler H Reuther W Keune |
| Institution: | 1. Laboratorium für Angewandte Physik, Gerhard-Mercator-Universit?t Duisburg, D-47048, Duisburg, Germany 2. Forschungszentrum Rossendorf e.V., Institut für Ionenstrahlphysik und Materialforschung, D-01314, Dresden, Germany |
| Abstract: | Si+ ions of 50 keV in energy were implanted into α-Fe (95% 57Fe) with a nominal dose of 5 × 1017 cm?2 at 350°C. The depth distribution of the Fe-Si phases formed by ion implantation after annealing at 300 and 400°C for 1 h was studied quantitatively by depth-selective conversion-electron Mössbauer spectroscopy (DCEMS). Ordered Fe3Si and ε-FeSi was observed. |
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