A theoretical and experimental evaluation of III-nitride solar-blind UV photocathode |
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| Institution: | 1.Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China;2.Department of Physics, Beijing Institute of Technology, Beijing 100081, China;3.Kunming Institute of Physics, Kunming 650223, China;4.Institute of Electron Engineering and Photoelectric Technology, Nanjing University of Science and Technology, Nanjing 210094, China;5.Chongqing Optoelectronics Research Institute, Chongqing 400060, China;6.Newcastle University Business School, Newcastle, The UK |
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| Abstract: | We have developed a superior solar-blind ultraviolet (UV) photocathode with an AlxGa1-xN photocathode (x ～ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1-xN: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects. |
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| Keywords: | photocathode III-nitride solar-blind UV |
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