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Kinetics of light-induced degradation in compensated boron-doped silicon investigated using photoluminescence and numerical simulation
Institution:1. Institut des Nanotechnologies de Lyon (INL), UMR 5270, University of Lyon, INSA-Lyon, 20 rue Albert Einstein, 69621 Villeurbanne Cedex, France;2. CEA, LITEN, INES, 50 av. du Lac Léman, F-73377 Le Bourget du Lac, France;1. INRA UMR 1121, Agronomie & Environnement Nancy-Colmar, TSA 40602, 54518 Vandoeuvre Cedex, France;2. Université de Lorraine UMR 1121, Agronomie & Environnement Nancy-Colmar, TSA 40602, 54518 Vandoeuvre Cedex, France;3. Centre for Organelle Research, University of Stavanger, Stavanger Innovation Park, Måltidets Hus, 4021 Stavanger, Norway;4. Department of Computer Science and Electrical Engineering, University of Stavanger, 4036 Stavanger, Norway;1. School of Physical Science and Technology, Yunnan University, Kunming 650091, People?s Republic of China;2. Faculty of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650091, People?s Republic of China;3. Yunnan Key Laboratory of Micro/Nano Materials & Technology, Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, People?s Republic of China;1. Department of Energy Systems Engineering, Engineering Faculty, Güre Campus, 28200, Giresun, Turkey;2. Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipa?a Campus, 28100 Giresun, Turkey;1. School of Environmental and Municipal Engineering, Tianjin Chengjian University, Tianjin 300384, China;2. Colleges of Science, Tianjin Chengjian University, Tianjin 300384, China;3. School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China;1. Dokuz Eylul University, Faculty of Sciences, Physics Department, 35160 Buca, Izmir, Turkey;2. Yuzuncu Yil University, Faculty of Sciences, Physics Department - Zeve Campus, 65100 Van, Turkey;3. Adnan Menderes University, Faculty of Arts and Sciences, Physics Department, 09100 Aytepe, Aydin, Turkey
Abstract:We use photoluminescence to observe light-induced degradation in silicon in real time. Numerical simulations are used to match our results and lifetime decay data from the literature with theoretical models for the generation of the light-induced boron–oxygen defects. It is found that the existing model of the slowly generated defect SRC, where its saturated concentration is a function of the majority carrier concentration, does not explain certain results in both p- and n-type samples. A new model is proposed in which the saturated SRC concentration is controlled by the total hole concentration under illumination.
Keywords:Photovoltaics  Silicon  Light-induced degradation  Photoluminescence  Modeling
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