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铁电薄膜底电极对薄膜结构与电性能的影响
引用本文:卢德新,李佐宜,刘建设,黄龙波,梁俊文.铁电薄膜底电极对薄膜结构与电性能的影响[J].物理学报,1994,43(12):1932-1937.
作者姓名:卢德新  李佐宜  刘建设  黄龙波  梁俊文
作者单位:华中理工大学固体电子学系
基金项目:国家高技术研究发展计划资助的课题.
摘    要:研究了电极材料(Pt/Ti)对铁电PLZT(7.5/65/35)陶瓷薄膜结构和性能的影响.认为在Pt层厚度一定时,Ti层的厚度对铁电薄膜的结构和性能有显著影响.当Ti层过厚或过薄时,铁电薄膜的结构较差;而当Ti层的厚度适中时,则铁电薄膜的显向下微结构均匀,电性能较好,典型的剩余极化强度和矫顽场分别为27.8μC·cm-2和65.1kV·cm-1关键词

关 键 词:铁电薄膜  陶瓷  薄膜  结构  电性能  电极材料
收稿时间:1993-12-24

EFFECT OF THE BOTTOM ELECTRODES ON THE STRUCTURE AND ELECTRIC PROPERTIES OF FERROELECTRIC THIN FILMS
LU DE-XIN,LI ZUO-YI,LIU JIAN-SHE,HUANG LONG-BO and LIANG JUN-WEN.EFFECT OF THE BOTTOM ELECTRODES ON THE STRUCTURE AND ELECTRIC PROPERTIES OF FERROELECTRIC THIN FILMS[J].Acta Physica Sinica,1994,43(12):1932-1937.
Authors:LU DE-XIN  LI ZUO-YI  LIU JIAN-SHE  HUANG LONG-BO and LIANG JUN-WEN
Abstract:The effect of electrode materials on the structure and electric properties of ferroelectric PLZT(7.5/65/35) ceramic thin films has been investigated. It has been shown that, for a certain thickness of the Pt layer, the thickness of the Ti layer has a dominant effect on the structure and electric properties of the ferroele-ctric thin films. When the Ti layer was too thick or too thin, PUT thin films had undesireable crystalline structure. However, with appropriate thickness of the Ti layer, ferroelectric thin films of good microstructure and electric properties be obtained, with typical remanent polarization 27.8μ C·cm-2,and coercive field 65.1kV·cm-1,respectively.
Keywords:
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