Detection of impurity segregation in zone-confined, polycrystalline tin-doped indium oxide thin films by STM and AFM

This paper discusses the possibility of using STM and AFM to image the dopant material in a segregated state. Samples of tin-doped indium oxide were prepared using a zone-confining process. The resultant material has dopant species segregated over certain grain boundaries at desired positions while the others remain dopant free. Samples were then imaged using STM, AFM and STEM. Enhanced contrast from the dopant rich grain boundaries and a larger grain size are observed at the surface making an interface with the substrate as compared to the free surface of the sample, while secondary electron STEM images show these grains to be smaller in size and the boundaries to be almost physically flat. This is interpreted to be a consequence of the zone-confining effect.