Reconfigurable Logic Devices on a Single Dopant Atom—Operation up to a Full Adder by Using Electrical Spectroscopy |
| |
| Authors: | Michael Klein Gabriel P Lansbergen Jan A Mol Sven Rogge Prof Raphael D Levine Prof Francoise Remacle Prof |
| |
| Institution: | 1. The Fritz Haber Research Center for Molecular Dynamics, The Hebrew University of Jerusalem, 91904 Jerusalem (Israel), Fax: (+972)?2?6513742;2. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (The Netherlands);3. Department of Chemistry and Biochemistry, The University of California Los Angeles, Los Angeles CA 90095‐1569 (USA);4. Directeur de Recherches, FNRS, Department of Chemistry, B6c, University of Liège, B4000 Liège (Belgium), Fax: (+32)?4?3663413 |
| |
| Abstract: | A silicon field‐effect transistor is operated as a logic circuit by electrically addressing the ground and excited electronic states of an embedded single dopant atom. Experimental results—complemented by analytical and computational calculations—are presented. First, we show how a complete set of binary logic gates can be realized on the same hardware. Then, we show that these gates can be operated in parallel on the very same dopant up to the logic level of a full adder. To use the device not as a switch but as a full logic circuit, we make essential use of the excited electronic states of the dopant and of the ability to shift their energy by gating. The experimental ability to use two channels to measure the current flowing through the device and the conductance (dI/dV) allows for a robust reading of the output of the logic operations. |
| |
| Keywords: | doping electrical spectroscopy electron transfer molecular devices single‐electron transistors |
|
|
