|
|||||
|
|
Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride |
|
| Authors: | II Izhnin OI Fitsych Z Świątek Y Morgiel OYu Bonchyk HV Savytskyy KD Mynbaev AV Voitsekhovskii AG Korotaev MV Yakushev DV Marin VS Varavin SA Dvoretsky |
| Institution: | 1. Scientific Research Company “Electron-Carat”, Lviv, 79031, Ukraine;2. National Research Tomsk State University, Tomsk, 634050, Russia;3. Hetman Petro Sahaidachny National Army Academy, Lviv, 79012, Ukraine;4. Institute of Metallurgy and Material Science PAN, Krakow, 30-059, Poland;5. Ya.S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASU, Lviv, 79060, Ukraine;6. Ioffe Institute, Saint–Petersburg, 194021, Russia;7. ITMO University, Saint–Petersburg, 197101, Russia;8. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia |
| Abstract: | Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted. |
| Keywords: | HgCdTe Implantation Defects Microscopy |
| 本文献已被 ScienceDirect 等数据库收录！ | |