Phase formation and redistribution of Xe implanted in the Ni-Si system after fast melting and solidification

The behaviour of Xe implanted at the Ni-Si interface and irradiated with Nd-laser pulses is studied in details and compared with Xe implantation into NiSi₂ and into pure Si. Ion beam mixing followed by laser irradiation is able to form good quality epitaxial NiSi₂ layer on Si.An inward segregation of Xe is observed with retention of Xe at a depth of 30 nm inside pure silicon. Implantation of Xe into NiSi₂ or pure Si causes broadening and loss of Xe, as generally observed for implantation into pure materials. The different behaviour of Xe at the Si/NiSi₂ interface must thus be ascribed to peculiar characteristics of the interface itself.