Terahertz Quantum Cascade Laser at 3.39THz |
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Authors: | CAO Jun-Cheng LI Hua HAN Ying-Jun TAN Zhi-Yong LU Jing-Tao LUO Hui LAFRAMBOISE Sylvain LIU Hui-Chun |
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Institution: | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada |
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Abstract: | We demonstrate the growth of terahertz quantum cascade laser (THz QCL) by gas source molecular beam epitaxy. X-ray diffraction and cross-sectional transmission electron microscopic measurements show the high crystalline quality of the THz QCL active region. From the cross-sectional transmission electron microscopy image, sharp interfaces are observed and the deducedcascade period thickness is consistent with the result of x-raydiffraction. The test device is lasing at 3.39THz and operating up to 100K in pulsed mode. At 10K, the maximum output power is greater than 1mW with a threshold current density of 738A/cm2. |
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Keywords: | 42 55 Px 81 15 -z |
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