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Bistability in a complementary metal oxide semiconductor inverter circuit
Authors:Carroll Thomas L
Affiliation:Code 6362, US Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA. thomas.l.carroll@nrl.navy.mil
Abstract:Radiofrequency signals can disrupt the operation of low frequency circuits. A digital inverter circuit would seem to be immune to such disruption, because its output state usually jumps abruptly between 0 and 5 V. Nevertheless, when driven with a high frequency signal, the inverter can have two coexisting stable states (which are not at 0 and 5 V). Slow switching between these states (by changing the rf signal) will produce a low frequency signal. I demonstrate the bistability in a circuit experiment and in a simple model of the circuit.
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