| 分子束外延生长[111]晶向CdTe的研究 |
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| 引用本文： | 张兵坡,蔡春锋,才玺坤,吴惠桢,王淼.分子束外延生长[111]晶向CdTe的研究[J].物理学报,2012,61(4):46802-046802. |
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| 作者姓名： | 张兵坡 蔡春锋 才玺坤 吴惠桢 王淼 |
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| 作者单位： | 浙江大学物理学系 硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 国家自然科学基金(批准号：10974174和91021020)和浙江省自然科学基金(批准号：Z6100117， Z111057)资助的课题. |
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| 摘 要： | 本文采用分子束外延(MBE)方法在BaF2衬底上直接外延生长了CdTe(111)薄膜. 反射高能电子衍射(RHEED)实时监控生长表面, 衍射图样揭示了CdTe(111)在BaF2表面由二维生长向三维生长的变化过程．XRD表征验证了外延生长的CdTe薄膜的单晶性质．由红外透射光谱测量和理论拟合相结合, 得到了CdTe外延薄膜室温带隙宽度Eg=1.511 eV.
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| 关 键 词： | CdTe 分子束外延(MBE) RHEED XRD |
| 收稿时间： | 2011-04-17 |
Study of growth of [111]-oriented CdTe thin films by MBE |
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| Zhang Bing-Po,Cai Chun-Feng,Cai Xi-Kun,Wu Hui-Zhen and Wang Miao.Study of growth of [111]-oriented CdTe thin films by MBE[J].Acta Physica Sinica,2012,61(4):46802-046802. |
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| Authors: | Zhang Bing-Po Cai Chun-Feng Cai Xi-Kun Wu Hui-Zhen and Wang Miao |
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| Institution: | Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | In this study, CdTe(111) thin films were epitaxially grown on freshly cleaved BaF2 substrate using molecular beam epitaxy (MBE). In situ characterization of reflection high energy electron diffraction (RHEED) reveals the growth mode of transition from 2D to 3D. XRD analysis results verify the single crystalline property of the as-grown films. Theoretical method is adopted to fit the measured near infrared transmission spectrum, revealing a CdTe energy gap of 1.511 eV at room temperature. |
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| Keywords: | CdTe MBE RHEED XRD |
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