Image contrast of impurity regions of semiconductor crystals in scanning electron microscopy |
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| Authors: | E. I. Rau A. M. Tagachenkov |
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| Affiliation: | 1. Department of Physics, Moscow State University, Moscow, 119991, Russia
2. Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, Russia
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| Abstract: | A critical survey of the current state of the problem of visualizing local impurity regions of semiconductor crystals in a scanning electron microscope (SEM) is presented. A new physicotechnical solution for monitoring impurity distributions in doped regions that allows us to increase the contrast between images of impurity sectors in a wide range of concentrations is proposed. |
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