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Thermal conductivity and electrical resistivity of bulk indium and indium embedded in 7-nm channels of porous borosilicate glass
Authors:Yu A Kumzerov  A V Fokin  L S Parfen’eva  B I Smirnov  I A Smirnov  H Misiorek  A Jezowski
Institution:1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
2. Trzebiatowski Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, Wroclaw, 50-950, Poland
Abstract:A “porous glass + indium” nanocomposite has been prepared. The thermal conductivity κ(T) and electrical resistivity ρ(T) of the nanocomposite have been measured in the temperature range 5–300 K, and their fractions accounted for by nanoindium embedded in 7-nm channels of the porous glass have been determined. For comparison, κ and ρ of the bulk polycrystalline indium sample have been measured in the same temperature range. The electronic and phonon components of the thermal conductivity have been calculated for the nanoindium and bulk indium. It has been demonstrated that, as the result of the emergence of boundary electron and phonon scattering in the nanoindium, the electrical resistivity of this material becomes larger, and the phonon thermal conductivity, smaller than those of the bulk indium.
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