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高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究
引用本文:李帅帅,梁朝旭,王雪霞,李延辉,宋淑梅,辛艳青,杨田林.高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究[J].物理学报,2013,62(7):77302-077302.
作者姓名:李帅帅  梁朝旭  王雪霞  李延辉  宋淑梅  辛艳青  杨田林
作者单位:山东大学(威海)空间科学与物理学院, 威海 264209
基金项目:山东省自然科学基金(批准号: ZR2009AM020)和山东大学自主创新基金 (批准号: 2011ZRXT002, 2011ZRYQ010) 资助的课题.
摘    要:由于铟镓锌氧化物(IGZO) 薄膜具有高迁移率和高透过率的特点, 它作为有源层被广泛的应用于薄膜晶体管(TFT). 本文利用磁控溅射方法制备了TFT的有源层IGZO和源漏电极, 用简单低成本的掩膜法控制沟道的尺寸, 制备了具有高迁移率、底栅结构的n型非晶铟镓锌氧化物薄膜晶体管 (IGZO-TFT). 利用X 射线衍射仪(XRD) 和紫外可见光分光光度计分别测试了IGZO薄膜的衍射图谱和透过率图谱, 研究了IGZO薄膜的结构和光学特性. 通过测试IGZO-TFT的输出特性和转移特性曲线, 讨论了IGZO有源层厚度对IGZO-TFT特性的影响. 制备的IGZO-TFT器件的场效应迁移率高达15.6 cm2·V-1·s-1, 开关比高于107. 关键词: 非晶铟镓锌氧化物 薄膜晶体管 有源层

关 键 词:非晶铟镓锌氧化物  薄膜晶体管  有源层
收稿时间:2012-11-01

The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors
Li Shuai-Shuai,Liang Chao-Xu,Wang Xue-Xia,Li Yan-Hui,Song Shu-Mei,Xin Yan-Qing,Yang Tian-Lin.The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors[J].Acta Physica Sinica,2013,62(7):77302-077302.
Authors:Li Shuai-Shuai  Liang Chao-Xu  Wang Xue-Xia  Li Yan-Hui  Song Shu-Mei  Xin Yan-Qing  Yang Tian-Lin
Institution:Department of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China
Abstract:Indium gallium zinc oxide (IGZO) is widely used in thin-film transistors (TFT) as an active layer due to its high mobility and transmittance. The amorphous n-type indium gallium zinc oxide thin-film transistors (IGZO-TFT) of bottom gate with high mobility were prepared, the active layer, source and drain electrode of the TFT were prepared by using magnetron sputtering method, and a low cost mask was used to control the size of the channel. The diffraction pattern and transmittance spectrum were measured by using X-ray diffraction and ultraviolet-visible spectrophotometer, respectively. The structural and optical properties of the IGZO thin film were studied. The dependence of active layer thickness on the performance was analyzed by testing the output characteristics and transfer property of IGZO-TFT. The field effect mobility of the IGZO-TFT reaches 15.6 cm2·V-1·s-1, and the on/off ratio is higher than 107.
Keywords:amorphous indium gallium zinc oxide  thin- film transistor  active layer
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