单电子晶体管电流解析模型及数值分析

本文首先建立单电子晶体管的电流解析模型, 然后将蒙特卡罗法与主方程法结合进行数值分析, 研究了栅极偏压、漏极偏压、温度与隧道结电阻等参数对器件特性的影响. 结果表明: 对于对称结, 库仑台阶随栅极偏压增大而漂移; 漏极电压增大, 库仑振荡振幅增强, 库仑阻塞则衰减; 温度升高将导致库仑台阶和库仑振荡现象消失. 对于非对称结, 源漏隧道结电阻比率增大, 库仑阻塞现象越明显. 关键词： 单电子晶体管 解析模型 蒙特卡罗法 主方程法

Analytical I-V model and numerical analysis of single electron transistor

The analytical I-V model of single electron transistor has been established and simulated by combining the Monte Carlo method with the Master Equation method. Effects of gate voltage, drain voltage, temperature, and tunneling junction resistance on electrical characteristics of a single electron transistor are analyzed. Simulation results indicate that for the device with symmetrical tunneling junction structure, the Coulomb staircases shift with increasing gate voltage, and the Coulomb oscillation amplitude increases with increasing drain voltage, while the Coulomb gaps decrease. The Coulomb staircases and the Coulomb oscillation disappear gradually with increasing temperature. The Coulomb blockade effects become more significant when the resistance ratio of the two asymmetrical tunneling junctions increases.