| 直拉单晶硅中洁净区形成后铜沉淀行为的研究 |
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| 引用本文： | 张光超,徐进.直拉单晶硅中洁净区形成后铜沉淀行为的研究[J].物理学报,2013,62(7):76103-076103. |
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| 作者姓名： | 张光超 徐进 |
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| 作者单位： | 1. 厦门大学材料学院, 厦门 361005;2. 浙江大学硅材料国家重点实验室, 杭州 310027 |
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| 基金项目： | 国家自然科学基金 (批准号: 50902116)、硅材料国家重点实验室开放基金(批准号: SKL2012-17)和福建省高等学校新世纪优秀人才支持计划资助的课题. |
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| 摘 要： | 本文研究了直拉单晶硅中形成洁净区后过渡族金属杂质铜的沉淀行为. 样品经过高低高三步常规热处理形成洁净区后, 在不同温度下引入杂质铜, 然后对样品分别进行普通热处理和快速热处理, 通过腐蚀和光学显微镜研究发现, 在700 ℃引入铜杂质后经过普通热处理和快速热处理都不会破坏洁净区, 在900 ℃和1100 ℃引入铜杂质后经过普通热处理不会破坏洁净区, 而经过快速热处理会破坏洁净区. 研究表明, 快速热处理可以使硅片体内产生大量的空位, 空位的外扩散是破坏洁净区的主要原因.
关键词：
直拉单晶硅
铜沉淀
洁净区
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| 关 键 词： | 直拉单晶硅 铜沉淀 洁净区 |
| 收稿时间： | 2012-08-17 |
Investigation of copper precipitation in denuded zone in Czochralski silicon |
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| Zhang Guang-Chao,Xu Jin.Investigation of copper precipitation in denuded zone in Czochralski silicon[J].Acta Physica Sinica,2013,62(7):76103-076103. |
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| Authors: | Zhang Guang-Chao Xu Jin |
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| Institution: | 1. College of Materials, Xiamen University, Xiamen 361005, China;2. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | The precipitation behavior of copper in denuded zone (DZ) of Czochralski silicon has been systematically investigated by means of etching and optical microscopy (OM). Firstly, the samples were treated in a conventional furnace by high-low-high annealing for the formation of denuded zone. Subsequently, copper contamination was introduced at different temperatures. Finally, samples were treated with rapid thermal annealing (RTA) and conventional furnace annealing separately. It was found that, copper precipitates could be observed in DZ through OM only in the samples which experienced RTA followed by contamination in 900 ℃ and 1100 ℃. This indicates that the out-diffusion of vacancy which is produced in the process of RTA is the main cause for the copper precipitation in DZ. |
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| Keywords: | Czochralski silicon copper precipitation denuded zone |
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