| High Speed 2×2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs |
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| 作者姓名： | 戚伟 余辉 江晓清 杨建义 郝寅雷 周强 王明华 |
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| 基金项目： | Supported by the Key Project of the National Natural Science Foundation of China under Grant No 60436020, and the Major State Basic Research Programme of China under Grant No 2007CB613405. |
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| 摘 要： | A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below lOns. The fiat response spectrum throughout the 1542-1562 nm wavelength range indicates that this device is insensitive to wavelength.
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| 关 键 词： | AlGaAs 载流子注入 光开关 偏振敏感性 A型 波长范围 外延材料 注入电流 |
| 收稿时间： | 2008-11-11 |
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