Highly linear micropower class AB current mirrors using Quasi-Floating Gate transistors |
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Authors: | Fermin Esparza-Alfaro Antonio J Lopez-Martin Ramon G Carvajal Jaime Ramirez-Angulo |
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Institution: | 1. Department of Electrical and Electronic Engineering, Public University of Navarra, Campus Arrosadía, E-31006 Pamplona, Spain;2. Department of Electronic Engineering, School of Engineering, University of Seville, Camino de los Descubrimientos, E-41092 Sevilla, Spain;3. Klipsch School of Electrical and Computer Engineering, New Mexico State University, Las Cruces, NM 88003, USA |
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Abstract: | A design approach to achieve low-voltage micropower class AB CMOS cascode current mirrors is presented. Both class AB operation and dynamic cascode biasing are based on the use of Quasi-Floating Gate transistors. They allow high linearity for large signal currents and accurately set quiescent currents without requiring extra power consumption or supply voltage requirements. Measurement results show that dynamic cascode biasing allows a wider input range and a linearity improvement of more than 23 dB with respect to the use of conventional biasing. A THD value better than −35 dB is measured for input amplitudes up to 100 times the bias currents. Two class AB current mirror topologies are proposed, with slightly different ways to achieve class AB operation and dynamic biasing. The proposed current mirrors, fabricated in a 0.5 µm CMOS technology, are able to operate with a supply voltage of 1.2 V and a quiescent power consumption of only 36 µW, using a silicon area <0.025 mm2. |
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Keywords: | Class AB current mirror Current mirror Quasi-Floating Gate transistor Dynamic biasing |
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