Evaluation of characteristic parameters for high performance hall cells |
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Authors: | Maria-Alexandra Paun Jean-Michel Sallese Maher Kayal |
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Institution: | 1. High Voltage Microelectronics and Sensors (HVMS) Group, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom;2. STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland |
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Abstract: | The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the generation of the Hall cells. Experimental results regarding the Hall cells absolute sensitivity, offset and offset temperature drift are provided for two particular structures exhibiting the best behavior in terms of maximum sensitivity and lowest offset. Three-dimensional physical simulations were performed for the structures and the Hall mobility was extracted. Representation of the inverse of the geometrical correction factor for the Greek-cross Hall cell is also provided. |
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Keywords: | Hall cells Three-dimensional physical simulations Hall voltage Absolute sensitivity Offset Temperature effects Hall mobility |
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