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Analyses for various doping structures of SOI-based optical phase modulator using free carrier dispersion effect |
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| Authors: | B Mardiana Sahbudin Shaari P Susthitha Menon H Hazura AR Hanim N Arsad H Abdullah |
| Institution: | 1. Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Malaysia;2. Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia |
| Abstract: | This paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase modulators based on free carrier dispersion effect. The proposed modulators employ the forward biased P-I-N diode structure integrated in the waveguide and will be working at 1.55 μm optical telecommunications wavelength. Three kinds of structure are compared systematically where the p+ and n+ doping positions are varied. The modeling and characterization of the SOI phase modulators was carried out by 3D numerical simulation package. Our results show that the position of doping regions have a great influences to the device performance. It was discovered that the best structure in this work demonstrated modulation efficiency of 0.015 V cm with a length of 155 μm. |
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