Research on quantum efficiency of transmission-mode InGaAs photocathode |
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Authors: | Muchun Jin Benkang Chang Hongchang Cheng Jing Zhao Mingzhu Yang Xinlong Chen Guanghui Hao |
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Institution: | 1. Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science & Technology, Nanjing 210094, China;2. Key Laboratory of Low Light Level Technology of COSTIND, Xi’an 710065, China |
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Abstract: | To investigate the quantum efficiency of high performance transmission-mode InGaAs photocathode, the quantum efficiency curve is fitted by using the multilayer optical thin film theory and the first principle calculation. A series of the performance parameters are obtained with the relative error less than 5%. It indicates that the thickness of the emission layer is 0.7–0.9 μm, the thickness of the window layer is 0.1–0.3 μm. Meanwhile the results from the first principle calculation are proved to be reliable as well. In addition, the long-wave response will increase and the highest integral sensitivity will be obtained when the thickness of the emission layer is the optimum value. For the InGaAs photocathode, the back interface recombination velocity mainly leads to the low integral sensitivity, which is caused by the material lattice mismatch. |
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Keywords: | InGaAs photocathode Quantum efficiency First principle calculation Back interface recombination velocity |
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